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Semiconductor Wafers & Materials
A Semiconductor material has the ability to control the number of charge carriers due to its sensitivity to impurities in the crystal lattice. The controlled addition of these impurities known as doping allows the tuning of electronic properties of a semiconductor material, an important requirement for technological applications.
We offer Semiconductor wafers with diameters ranging from 2” to 8”. To satisfy our customers’ requirements, substrates and deposited thin film layers are manufactured as required and delivered according to their specifications.
General Applications
Our wafer substrates are compliant to Customer Specific Specifications for Prime and Test Grades Wafers, and they are in line with both SEMI (Semiconductor Equipment and Materials International) and JEIDA (Japan Electronic Industries Development Associations) Specifications.
Silicon Wafers are manufactured from Monocrystalline Silicon and are typically used in applications such as Electronic Integrated Circuits (ICs).
Types of Monocrystalline Silicon Wafers include:
- Czochralski (CZ) Mono-Crystalline Silicon
- Float-Zone (FZ) Mono-Crystalline Silicon
General Specifications for Silicon Wafers
Silicon Wafers Specifications | |
| Wafer Diameters | 2”, 3”, 4”, 5”, 6” and 8” 50 mm, 75 mm, 100 mm, 125 mm, 150 mm and 200 mm |
| Orientation | <1-0-0>, <1-1-0> or <1-1-1> |
| Dopants | N-Type – Phosphorous, Antimony or Arsenic P-Type – Boron |
| Thin Film Coatings | Metals and Oxides Coating Thicknesses 500 – 30,000 Å / ± 2 – 10% Specialized Coatings of Thickness 15 µm |
| Lapping / Polishing Capabilities | Single and Double-Sided Processing |
| Customized Services | Laser Manufacturing Services Custom Sizing and Dicing |
Czochralski Mono-Crystalline Silicon
Types of CZ Mono-Crystalline Silicon include:
- Czochralski-Silicon (CZ-Si)
- Magnetic Czochralski Silicon (MCZ-Si)
- Czochralski Heavily Doped Silicon (CZ Heavily Doped Silicon)
Typical Specifications for CZ Mono-Crystalline Silicon
CZ Mono-Crystalline Silicon Specifications | ||||
| Type | Diameter mm | Orientation | Conductivity | Resistivity Ω.cm |
| CZ-Si | 76.2 – 200 | <1-0-0>, <1-1-0> & <1-1-1> | N & P | 1 – 300 |
| MCZ-Si | 76.2 – 200 | <1-0-0>, <1-1-0> & <1-1-1> | N & P | 1 – 300 |
| Heavy Doped | 76.2 – 200 | <1-0-0> & <1-1-1> | N & P | 0.001 – 1 |
Float-Zone Mono-Crystalline Silicon
Types of FZ Mono-Crystalline Silicon include:
- Float-Zone Silicon (FZ-Si)
- Float-Zone Neutron Transmutation Doped Silicon (FZNTD-Si)
- Float-Zone Gas Doped Silicon (FZGD-Si)
- Czochralski & Float-Zone Silicon (CFZ-Si)
Typical Specifications for FZ Mono-Crystalline Silicon Specifications
FZ Mono-Crystalline Silicon Specifications | ||||
| Type | Diameter mm | Orientation | Conductivity | Resistivity Ω.cm |
| FZ-Si | 76.2 – 200 | <1-0-0> & <1-1-1> | N & P | > 1000 |
| FZNTD-Si | 76.2 – 200 | <1-0-0> & <1-1-1> | N | 30 – 800 |
| FZGD-Si | 76.2 – 200 | <1-0-0> & <1-1-1> | N & P | 0.001 – 300 |
| CFZ-Si | 76.2 – 200 | <1-0-0> & <1-1-1> | N & P | 1 – 50 |
High Purity Germanium is a Semiconductor material with similar characteristics and properties to that of Monocrystalline Silicon and is commonly used in Fibre Optics, Infrared (IR) Optics and Solar Cell applications.
High Purity Germanium is manufactured and delivered in various forms such as Granules, Powders, Rods, Optics and Wafers.
Typical Forms and Specifications for High Purity Germanium
Germanium Granules
Sliver Grey Granules Specifications | |||
| Diameter | Height | Shape | Purity |
| Ø5 mm | 2.5 mm | Cone | Ge ≥ 99.999% |
| Ø7 mm | 2.5 mm | Cone | Ge ≥ 99.999% |
| Ø4 mm | 1 mm | Cylinder | Ge ≥ 99.999% |
| Ø7 mm | 2.5 mm | Cylinder | Ge ≥ 99.999% |
| Ø7 mm | 5 mm | Cylinder | Ge ≥ 99.999% |
| Allows for customisation to fulfil customers’ requirements | |||
Germanium Powders
Black Grey Powder Specifications | |
| Typical Purity | Wire Mesh Granularity |
| ≥ 99.999% | ≤ 200 Mesh |
Germanium for IR Optics
IR Optics Germanium Specifications | |||
| Diameter | Thickness Tolerance | Resistivity Range | Transmittance |
| ≤ 105 mm | ± 0.02 mm / ± 0.05 mm | 1 – 40 Ω.cm | > 46% |
Monocrystalline / Polycrystalline Germanium Rods
Typical Applications
- Semiconductor Devices
- Infrared Optical Devices
- Solar Cell Substrates
Zone Refined Germanium
Germanium Single Crystals and Germanium Alloys Specifications | ||
| Shape | Specifications | Resistivity |
| Silver Grey Ingot-Shaped | N-Type / P-Type | ≥ 50 Ω.cm (23°C ± 0.5°C) |
Monocrystalline Germanium Substrates / Wafers
Germanium Wafers for Semiconductor / IR Optical Lens Specifications | |||
| Shape | Specifications | Resistivity | Diameter Range |
| Silver Grey Wafer | N-Type | N-Type 0.001-50 Ω.cm | Ø12 – Ø300 mm |
| P-Type | P-Type 0.001-40 Ω.cm | ||
Epitaxial Wafers are semiconducting materials derived from Epitaxial growth (Epitaxy) for use in the Microelectronics industry.
Epitaxial Wafer substrates comply with both XT and Customers’ Specific Specifications. They conform to both SEMI (Semiconductor Equipment and Materials International) Standards for Discrete Devices and ASTM (American Society for Testing and Materials) Specifications for Test and Measurement Methods.
Types of Epitaxial Wafers include:
- Silicon Epitaxial Wafers (Up to diameters of 8”)
- Silicon on Sapphire Epitaxial Wafers (Up to diameters of 6”)
Typical Specifications for Epitaxial Wafers
Epitaxial Wafers Specifications | ||
| Per Applicable Customer / XT’s Specifications | Silicon Epitaxial Wafers | Silicon on Sapphire Epitaxial Wafers |
| Wafer Diameter | 3”, 4”, 6”, 8” | 3”, 4”, 6” |
| Orientation | <1-1-1> & <1-0-0> | (1012) ± 1° |
| Substrate Dopant | Antimony, Boron, Arsenic | NA |
| EPI-Layer Thickness µm | 3.0 – 150 | 0.3 – 2.0 |
| EPI Layer Dopant | Phosphorous, Boron, Arsenic | Phosphorous, Boron |
| EPI-Layer Resistivity Ω.cm N-Type P-Type | 0.01 – 500 0.01 – 100 | Per XT’s Specifications 0.01 – 1.0 |
| Multi-Layer Structures | Up to 4 Layers Per Customer Specifications | NA |
| Buried-Layer Epitaxy | Up to 3 Buried Layers | NA |
A SOI Wafer is a three-layered semiconducting material that helps to reduce the power and heat while increasing the speed performance of a Microelectromechanical device.
SOI Wafers are available with varying ranges of wafer sizes and thicknesses, allowing for customisation to fulfil specific customer requirements.
Types of SOI Wafers include:
- Thick SOI Wafers
- Ultra-Thin SOI Wafers
- Ultra-Uniform SOI Wafers
- Ultra-Flat SOI Wafers
Typical Specifications for SOI Wafers
SOI Wafers Specifications | |||||
| Wafer Diameter | Resistivity | Device Layer Thickness | Device Layer Uniformity | Box Layer Thickness | Handle Layer Thickness |
2”, 3″, 4″, 5″, 6″, 8” | 0.001 – 30000+ Ω.cm | 100 nm – 200 µm | ± 0.01 µm | Up to 15 µm | Up to 100 µm |
Thin Film Deposition is a manufacturing technology where a thin layer of material with thickness ranging from nanometres to micrometres is applied onto a substrate or wafer.
The Thin Film Deposition manufacturing process is the basic manufacturing foundation for:
- Semiconductors
- Solar Panels
- Disk Drives
- Optical Devices
Thin Film Processes:
- Physical Vapour Deposition (PVD)
- Direct Current (DC) Magnetron Sputtering
- Radio Frequency (RF) Sputtering
- Wet & Dry Thermal Oxidation
- Low Pressure Chemical Vapour Deposition (LPCVD)
- Plasma-Enhanced Chemical Vapour Deposition (PECVD)
- Evaporation Process
Thin Film PVD Materials include:
- Aluminium (Al) / Alloys, Gold (Au), Aluminium Oxide (Al2O3), Silver (Ag)
- Carbon (C), Cobalt (Co) / Alloys, Chromium (Cr) / Alloys, Copper (Cu) / Alloys
- Indium Tin Oxide (ITO)
- Molybdenum (Mo)
- Nickel (Ni) / Alloys
- Palladium (Pd), Platinum (Pt)
- Ruthenium (Ru)
- Silicon (Si) / Alloys,
- Tantalum (Ta) / Alloys, Titanium (Ti) / Alloys
- Vanadium (V)
- Tungsten (W) / Alloys
- Zirconium (Zr) / Zirconium Dioxide (ZrO2)
Typical Specifications for Thin Film Deposition techniques:
Physical Vapour Deposition
DC Magnetron Sputtering | RF Sputtering | ||
| Film Thickness | Tolerance | Film Thickness | Tolerance |
| 20 Å – 30 kÅ | ± 10% | 20 Å – 30 kÅ | ± 10% |
Thermal Oxidation
Wet Thermal Oxidation | Dry Thermal Oxidation | ||
| Film Thickness | Tolerance | Film Thickness | Tolerance |
| 2000 Å – 100 kÅ | ± 10% | 500 Å – 2000 Å | ± 10% |
LPCVD FILMS
Materials | Film Thickness | Tolerance | Tensile Stress |
| Stoichiometric Nitride | 100 Å – 4000 Å | ± 10% | > 800 MPa |
| Low Stress Nitride | 50 Å – 2 µm | ± 10% | < 250 MPa |
| Super Low Stress Nitride | 50 Å – 2 µm | ± 10% | < 100 MPa |
PECVD FILMS
Materials | Film Thickness | Tolerance | Stresses |
| Oxide | 100 Å – 3 µm | ± 10% | Compressive Film Stress |
| Oxy Nitride | 100 Å – 2 µm | ± 10% | 250 MPa Tensile |
Thin Film Coatings (Evaporation Process)
Typical Types of Evaporation Coatings:
- High Efficiency Anti-Reflection Coatings
- Metallic Mirror Coatings
- Dielectric Laser Line High Reflectors
- Broadband Dielectric High Reflectors
- Band-Pass and Narrow Band Filters
- Narrow Band and Deep Blocking Notch Filters
- Steep-Slope and Deep Blocking Edge Filters
- Dichroic Colour Filters
- Neutral Density, Dielectric and Immersed Beam Splitters
- Polarizing and Non-Polarizing Beam Splitters
- Hot and Cold Mirrors
- Hydrophobic Coatings
- Transparent Conductive ITO Coatings
- Low Reflectance Coatings
Evaporation Coating Substrates:
- Optical Glass
- Fused Silica
- Sapphire
- Calcium Fluoride
- Laser Crystals
- Silicon Wafer
- Glass Wafer
- Polymers